产品详情
 
soi绝缘硅片
 
北京特博万德科技乐盈彩票注册独家代理英国ICEMOSTECH的高品质SOI wafer和 SuperJunction MOSFET。
SOI wafer尺寸:4”(100mm), 5”(125mm), 6”(150mm) and  8"(200mm)
SOI 规格:
 1-    Bonded SOI wafer (绝缘硅上键合硅片)
                          For 4”(100mm), 5”(125mm), 6”(150mm)
                     ---- Handle wafer minimum 300um maximum 1000um,
                     ---- Buried Oxide, minimum 0.1 um, maximum 4 um,
                     ---- Device layer minimum 2 um, max 500 um.
                         
                          For 8"(200mm)
                     ---- Handle thickness minimum 500um and maximum 675um,
                     ---- Buried Oxide minimum 0.1 um, maximum 4 um,
                     ---- Device layer minimum 5 um, maximum 500 um.
2-       Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合,可替代外延片
      100mm, 125mm, 150mm and 200mm, thickness as specified above.
3-       Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
      and finally Through Silicon Via (TSV)   
 ----  Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
 ---- Multiple SOI 2 or 3 or more layers of SOI designed around your process
 ---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
4-     SOI + Trench & Refill
 Features
  • a.  Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation
  • b.  Bulk quality top silicon layer
  • c.  Total device-to-device isolation
  • d.  Lower substrate capacitance than bulk
  • e.  Fully flexible specification on SOI, Trench and refill parameters
5-   Superjunction MOSFET
为了一些客户的紧急需求,英国工厂存有部分现货!
欢迎您来电咨询更详细的产品信息!
为满足更多客户要求,我们也提供顶层145nm/200nm/300nm/340nm/365nm/400nm 等规格SOI硅片。
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